SiC Wafer (Silicon Carbide Wafer)
High-performance SiC wafers for power electronics, high-temperature, and high-frequency applications.
Description
🔷 Overview
Silicon Carbide (SiC) wafers are wide bandgap semiconductor substrates widely used in power electronics, electric vehicles, and high-efficiency energy systems.
SiC features a wide bandgap of approximately 3.2–3.3 eV, enabling devices to operate at higher voltages, higher temperatures, and higher frequencies compared to conventional silicon-based devices.
In addition, SiC offers excellent thermal conductivity and high breakdown electric field, allowing efficient heat dissipation and improved reliability in high-power applications.
These properties make SiC a key material for next-generation power devices, significantly improving energy efficiency and reducing system size in applications such as electric vehicles and renewable energy systems.
🔷 Key Features
- Wide bandgap (~3.2–3.3 eV) for high-voltage operation
- High breakdown electric field (≈10× higher than Si)
- Excellent thermal conductivity for efficient heat dissipation
- High temperature capability (>300°C operation)
- Fast switching speed and low power loss
- High electron saturation velocity
- Strong chemical stability and radiation resistance
🔷 Specifications
| Product: | Silicon carbide (SiC) wafer | |||||
| Diamter: | 2” / 3” | |||||
| Polytype: | 4H / 6H | |||||
| Conductive type: |
• n-type (N) • Semi-insulating (SI) |
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| Orientation: |
• On-axis: <0001> • Off-axis: 1° / 3.5° / 4° / 8° towards <11-20> |
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| Grade: | Production Grade | Research Grade | Dummy Grade | |||
| Quality & price： | High | Medium | Low | |||
| Micro-pipe density: | < 10 cm-2 | < 30 cm-2 | < 100 cm-2 | |||
| Resistivity (Ω·cm): | 4H-N | 0.01 – 0.03 | 4H-N | 0.01 – 0.1 | 4H-N | 0.01 – 0.1 |
| 6H-N | 0.02 – 0.1 | 6H-N | 0.02 – 0.2 | 6H-N | 0.02 – 0.2 | |
| 6H-SI | > 105 (90%) | 6H-SI | > 105 (80%) | 6H-SI | > 105 (70%) | |
| Usable area: | > 90% | > 80% | > 70% | |||
| TTV / bow / Wrap: | < 25 um | |||||
| Polishing: | Single / double side epi-polished | |||||
| Surface roughness: | < 1 nm | |||||
| Useful Links: | • Properties and applications of SiC | |||||
🔷 Applications
- Power electronics (MOSFETs, diodes)
- Electric vehicles (EV power modules)
- Renewable energy systems (solar, wind converters)
- High-frequency RF devices
- Industrial power systems
- Aerospace and high-temperature electronics
🔷 Why Choose SiC Over Silicon
- Higher voltage tolerance and power density
- Much lower switching and conduction losses
- Operates at significantly higher temperatures
- Improved energy efficiency and reduced cooling requirements
- Smaller and lighter system design
🔷 Customization Options
We support customized SiC wafers based on your requirements:
- Polytype (4H / 6H)
- Diameter and thickness
- Off-axis orientation
- Doping type
- Surface polishing
- Epitaxial-ready wafers
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