NdGaO₃ Wafer (Neodymium Gallate Substrate)
High-quality perovskite oxide substrate for superconducting, magnetic, and epitaxial thin film applications
Description
🔷 Overview
NdGaO₃ (Neodymium Gallate) wafer is a high-quality single crystal perovskite oxide substrate widely used for epitaxial growth of complex oxide thin films.
With its excellent lattice matching to high-temperature superconductors such as YBCO (~0.27% mismatch), NdGaO₃ enables high-quality film growth without structural phase transition, making it an ideal substrate for advanced oxide electronics and magnetic materials.
Its orthorhombic crystal structure and high thermal stability further support reliable performance in PLD, MBE, and sputtering deposition processes.
🔷 Key Features
- Excellent lattice match with superconducting materials (e.g. YBCO)
- No structural phase transition during epitaxy
- High crystal quality and stability
- Suitable for PLD, MBE, and sputtering
- Ideal for complex oxide thin films
- Good dielectric properties
🔷 Specifications
| Product: | NdGaO3 Wafer |
| Material property: | Crystal structure: Orthorhombic |
| Lattice constant: a = 5.43 Å, b = 5.50 Å, c = 7.71 Å | |
| Density: 7.57 g/cm3 | |
| Melting point: 1600 °C | |
| Growth Method: | CZ |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> /<110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
- High-temperature superconductors (YBCO films)
- Magnetic thin films
- Ferroelectric materials
- Complex oxide epitaxy
- GaN-related epitaxial research
🔷 Why Choose NdGaO₃ Wafer
- Superior lattice compatibility for superconductors
- Enables high-quality epitaxial growth
- No phase transition → stable interface
- Widely used in advanced oxide research
🔷 Customization Options
- Orientation & off-cut
- Thickness & size
- Surface finish (SSP / DSP / Epi-ready)
- Research-grade / device-grade
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