Prime Grade Silicon Wafer

High purity monocrystalline silicon substrate for semiconductor and research applications

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Description

🔷 Product Overview

A silicon wafer is a thin slice of high-purity single-crystal silicon used as the substrate for semiconductor device fabrication, including integrated circuits (ICs), MEMS devices, sensors, and photovoltaic cells.

Prime grade wafers offer superior surface quality, low defect density, and tight control of electrical properties, making them suitable for advanced fabrication and high-performance applications.

 

🔷 Key Specifications

Product: Monocrystalline Silicon (Si) wafer
Grade: IC prime grade
Purity: >99.999999999% (11N)
Growth Method: • CZ wafers are suitable for general semiconductor applications
• FZ wafers are recommended for high resistivity, RF and power devices
Diamension

Standard dimensions:

• 1” × 0.5 mm

• 2” × 0.28 / 0.4 / 0.5 mm

• 3” × 0.38 mm

• 4” × 0.525 mm

• 5” × 0.6 mm

• 6” × 0.625 mm

• 8” × 0.725 mm

Other diameters and thicknesses available

• We provide small-scale non-standard wafers for research / testing purposes.

Orientation: <100> / <110> / <111> / off-axis / others
Conductive type:

•  Undoped (also called intrinsic, native) type

•  N-type: phosphor (P) /Arsenic doped 

•  P-type: boron (B) doped

Resistivity:

Standard resistivity for undoped wafers:

• 3000 – 6000 Ω·cm

Standard resistivity for n-/ p-type wafers:

• 0.001 – 0.009 Ω·cm

• 1 – 10 Ω·cm

• 10 – 20 Ω·cm

• 90 – 100 Ω·cm

Other resistivity available

Polishing:

• As-cut wafers without polishing

• Single side epi-polished

• Double side epi-polished

Surface roughness: < 0.5 nm
Flat / Notch SEMI standard
Remarks: Si wafer with functional layers available (thermal oxide SiO2, silicon nitride Si3N4, etc)

 

🔷 Growth Method

Silicon wafers are produced using different crystal growth methods, which directly affect purity and electrical properties:

  • Czochralski (CZ):

    Standard industrial method, cost-effective, widely used for most semiconductor applications
  • Float Zone (FZ):

    Ultra-high purity, low oxygen content, ideal for high resistivity and advanced research applications

👉 FZ wafers are recommended for high-frequency, power electronics, and precision research applications.

 

🔷 Manufacturing Process

Typical silicon wafer production includes:

  • Crystal growth (CZ / FZ)
  • Ingot shaping and slicing
  • Edge grinding
  • Lapping and chemical etching
  • Chemical Mechanical Polishing (CMP)

This process ensures excellent flatness, uniform thickness, and defect-free surfaces.

 

🔷 Applications

  • Semiconductor device fabrication (IC)
  • MEMS and microfabrication
  • Photovoltaic research
  • Sensors and optoelectronics
  • University and R&D laboratories

 

🔷 Customization Available

We provide customized silicon wafers based on your requirements:

  • Diameter & thickness
  • Orientation & off-cut angle
  • Resistivity & dopant type
  • Single-side / double-side polishing
  • Oxide / epitaxial / special coatings

👉 Please contact us for tailored specifications.