YSZ Wafer (Yttria-Stabilized Zirconia Wafer)
High-temperature stable oxide substrate for epitaxy, buffer layers, and solid oxide fuel cells
Description
🔷 Overview
YSZ (Yttria-Stabilized Zirconia) wafer is a cubic single crystal substrate formed by doping zirconia (ZrO₂) with yttria (Y₂O₃), which stabilizes its crystal structure at room temperature.
It is widely used as a substrate and buffer layer for epitaxial oxide thin films, as well as a solid electrolyte in high-temperature applications such as solid oxide fuel cells (SOFC).
With excellent thermal stability, chemical resistance, and mechanical strength, YSZ is a versatile and cost-effective material for advanced research and industrial applications.
🔷 Key Features
• Stable cubic crystal structure (yttria-stabilized)
• Excellent thermal and chemical stability
• High hardness (≈8–8.5 Mohs)
• Good oxygen ion conductivity (high-temperature applications)
• Ideal as buffer layer for epitaxial growth on Si and other substrates
• Epi-ready surface with low roughness
🔷 Specifications
| Product: | Yttria stabilized ziconia (YSZ) wafer |
| Material: | ZrO2 : Y2O3 = 92 : 8 mol% |
| Material property: | Crystal structure: Cubic |
| Lattice constant: a = 5.125 Å | |
| Density: 5.80 g/cm3 | |
| Melting point: 2500 °C | |
| Growth Method: | Flux Technique |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
• Buffer layer for epitaxial growth (e.g. on Si substrates)
• Oxide thin film deposition (PLD / MBE / sputtering)
• Solid oxide fuel cells (SOFC electrolyte)
• Thermal barrier coatings and high-temperature devices
• Optical and infrared applications
🔷 Customization Options
• Y₂O₃ doping concentration (typically 8–13 mol%)
• Orientation and off-cut
• Thickness and dimension customization
• Double-side polishing (DSP) available
• Epi-ready surface treatment
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