Si₃N₄ Coated Silicon Wafers (Silicon Nitride Wafers)
High-performance silicon wafers with silicon nitride coatings for advanced semiconductor and MEMS applications.
Description
🔷 Description
Silicon wafers coated with a silicon nitride (Si₃N₄) layer are widely used as dielectric, passivation, and barrier layers in semiconductor and microfabrication processes.
The Si₃N₄ film is typically deposited using LPCVD or PECVD methods, offering excellent uniformity, mechanical strength, and chemical stability.
🔷 Key Features
- Excellent dielectric and barrier properties
- High thermal and chemical stability
- Strong mechanical strength and durability
- Suitable for high-temperature processes
- Available in single-side or double-side coating
🔷 Specifications
| Product: | Si wafer with Si3N4 (silicon nitride) layer |
| Production method: | LPCVD / PECVD |
| Si base wafer: | Si3N4 layer can be deposited on Si wafer of any grade (prime / dummy / solar / etc) |
| SiO2 coating: |
• Si3N4 layer coated on double sides The deposition method (LPCVD) naturally deposit Si3N4 layer on both sides. • Si3N4 layer coated on single side Si3N4 layer on back side (usually non-polished side) can be removed upon request. |
| Oxide layer thickness: | Usually several hundreds of nanometer |
| Polishing: |
• As-cut wafers without polishing • Single side epi-polished • Double side epi-polished |
🔷 Applications
- Semiconductor device fabrication
- MEMS and microfluidics
- Diffusion barrier layers
- Passivation coatings
- Etch mask applications
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