LiAlO₂ Wafer (Lithium Aluminate Substrate)
High-performance substrate for GaN epitaxy, superconducting films, and microwave applications
Description
🔷 Overview
Lithium Aluminate (LiAlO₂) wafer is a single crystal substrate widely used for epitaxial growth of GaN thin films and high-temperature superconducting materials.
With excellent lattice matching to GaN (mismatch <1.4%), LiAlO₂ is considered an ideal alternative to sapphire and ZnO substrates. It also exhibits low dielectric constant and low microwave loss, making it suitable for high-frequency and microwave device applications.
Its good thermal stability and chemical resistance further enable reliable performance in advanced deposition processes such as PLD, MBE, and sputtering.
🔷 Key Features
- Excellent lattice match with GaN (<1.4%)
- Low dielectric constant and low microwave loss
- High thermal and chemical stability
- Suitable for high-temperature processing
- Alternative to sapphire and ZnO substrates
- Cost-effective for epitaxial applications
🔷 Specifications
| Product: | Single crystal lithium aluminate (LiAlO2) wafer |
| Material property: | Crystal structure: Tetragonal |
| Lattice constant: a = 5.17 Å, c = 6.26 Å | |
| Density: 2.62 g/cm3 | |
| Melting point: 1900 °C | |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <001> / others |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
- GaN and III-V nitride epitaxy
- High-temperature superconducting thin films
- Microwave and RF devices
- Optoelectronic substrates (LEDs, laser diodes)
- Advanced thin film research
🔷 Why Choose LiAlO₂ Wafer
- Better lattice matching than sapphire for GaN
- Enables high-quality epitaxial growth
- Low microwave loss for RF applications
- Cost-effective alternative substrate
🔷 Customization Options
- Orientation & off-cut
- Thickness & size
- Surface finish (SSP / DSP / epi-ready)
- Research-grade / device-grade
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