KTaO₃ Wafer (Potassium Tantalate Wafer)
High-quality cubic perovskite substrate for oxide electronics and epitaxial growth
Description
🔷 Overview
KTaO₃ (Potassium Tantalate) wafer is a cubic perovskite single crystal widely used as a substrate for epitaxial growth of complex oxide thin films. It offers excellent lattice matching with many functional oxides and exhibits high dielectric constant, making it ideal for advanced electronic and optical applications.
🔷 Key Features
- Cubic perovskite crystal structure
- Excellent lattice matching for oxide thin films
- High dielectric constant and optical transparency
- Epi-ready surface with ultra-low roughness (< 0.5 nm)
- Available in various orientations and polishing options
🔷 Specifications
| Product: | KTaO3 Wafer |
| Material property: | Crystal structure: Cubic Perovskite |
| Lattice constant: a = 3.989 Å | |
| Density: 7.015 g/cm3 | |
| Hardness: 6 Mohs | |
| Thermal Conductivity: 0.17 W m-1 K-1 at 300 K | |
| Refractive Index: 2.14 | |
| Melting point: 1500 °C | |
| Growth Method: | Top seed flux growth |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
- Oxide thin film epitaxy (e.g. SrTiO₃, LaAlO₃ systems)
- High-k dielectric research
- Quantum materials and 2DEG studies
- Photonics and optical devices
- Advanced semiconductor research
🔷 Customization Options
- Orientation tolerance customization
- Thickness and dimension customization
- Double-side polishing (DSP) available
- Doping / special surface treatment (on request)
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