DyScO₃ Wafer (Dysprosium Scandate Wafer)
High-quality rare-earth scandate substrate for oxide epitaxy and strain engineering
Description
🔷 Overview
DyScO₃ (Dysprosium Scandate) wafer is an orthorhombic perovskite single crystal widely used as a substrate for epitaxial growth of complex oxide thin films. It offers excellent lattice matching and is especially suitable for strain engineering and high-performance functional oxide devices.
🔷 Key Features
• Orthorhombic perovskite crystal structure
• Excellent lattice matching for perovskite thin films
• Ideal for strain engineering applications
• High thermal and chemical stability
• Epi-ready surface with ultra-low roughness (< 0.5 nm)
🔷 Specifications
| Product: | DyScO3 Wafer |
| Material property: | Crystal structure: Orthorhombic |
| Lattice constant: a = 5.44 Å, b = 5.71 Å, c = 7.89 Å, | |
| Melting point: 2127 °C | |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <001> / <110> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
• Perovskite oxide thin film epitaxy
• Ferroelectric and multiferroic devices
• High-k dielectric research
• Strain engineering of functional materials
• Advanced semiconductor and quantum materials
🔷 Customization Options
• Orientation and off-cut customization
• Thickness and dimension customization
• Double-side polishing (DSP) available
• Epi-ready surface treatment
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