CdTe Wafer (Cadmium Telluride Wafer)

High-performance CdTe wafers for photovoltaic, infrared, and radiation detection applications.

Add To Quote
Description

🔷 Overview

Cadmium Telluride (CdTe) wafers are II–VI compound semiconductor substrates widely used in photovoltaic, optoelectronic, and radiation detection applications.

CdTe features a near-ideal direct bandgap (~1.5 eV) that closely matches the solar spectrum, enabling highly efficient energy conversion. It also exhibits a very high absorption coefficient (>10⁴–10⁵ cm⁻¹), allowing efficient light absorption even with thin material layers.

In addition, its high atomic number and high resistivity make CdTe an excellent material for X-ray and gamma-ray detection, capable of operating at room temperature without complex cooling systems.

 

🔷 Key Features

  • Direct bandgap (~1.5 eV) ideal for photovoltaic applications
  • High absorption coefficient (>10⁴–10⁵ cm⁻¹)
  • Efficient light absorption with thin material layers
  • Requires significantly thinner absorber layers compared to silicon
  • High atomic number for radiation detection
  • Capable of room-temperature operation
  • High resistivity and excellent stability
  • Suitable for optoelectronic and detector applications

 

🔷 Specifications

Product:

Single crystal Cadmium Telluride (CdTe) wafer

Material property:

Crystal structure:             Cubic

Lattice constant:              a = 6.483 Å

Density:                             5.851 g/cm3

Melting Point:                  1047 °C

Thermal Conductivity:     6.3 W/K.m at 300 K

Thermal Expansion Coefficient:  5.9 × 10⁻⁶ /K

Transmission Range: ~0.85 µm – 25 µm (IR transparent)

Refractive Index (n): ~2.7 at 10 µm

Growth Method:              PVT

Conductive type

 

• Un-doped

• P-type

Dimension:

• 5 × 5 × 0.5 mm

• 5 × 10 × 0.5 mm

• 10 × 10 × 0.5 mm

• 20 × 20 × 0.5 mm

• Other sizes customizable

Orientation:

• <100> ± 0.5°

• <001> ± 0.5°

• <110> ± 0.5°

• <111> ± 0.5°

Polishing:

• Fine ground

• Single side epi-polished

• double side epi-polished

Surface roughness:

< 0.5 nm

 

🔷 Applications

  • Thin-film solar cells (photovoltaics)
  • Infrared and optical devices
  • X-ray and gamma-ray detectors
  • Medical imaging systems
  • Semiconductor and optoelectronic research

 

🔷 Customization Options

We support customized CdTe wafers based on your requirements:

  • Diameter and thickness
  • Orientation and off-angle
  • Doping type and resistivity
  • Surface polishing (SSP / DSP)
  • Detector-grade or photovoltaic-grade material