GaAs Wafer (Gallium Arsenide Wafer)
High-performance GaAs wafers for RF, optoelectronic, and high-speed applications.
Description
🔷 Overview
Gallium Arsenide (GaAs) wafers are III–V compound semiconductor substrates widely used in high-frequency electronics, optoelectronics, and advanced communication systems.
GaAs features a direct bandgap (~1.4–1.43 eV), enabling efficient light emission and absorption, making it ideal for laser diodes, LEDs, and photonic devices.
Compared with silicon, GaAs offers significantly higher electron mobility (5–6× higher), allowing faster signal transmission and superior performance in RF and microwave applications.
In addition, GaAs exhibits low noise characteristics, strong radiation resistance, and excellent high-frequency performance, making it widely used in satellite communication, radar systems, and wireless networks.
🔷 Key Features
- Direct bandgap (~1.4 eV) for efficient light emission
- High electron mobility for high-speed electronics
- Excellent performance in RF and microwave applications
- Low noise characteristics for communication systems
- Strong radiation resistance for aerospace applications
- High-frequency capability for mmWave and 5G devices
- Suitable for optoelectronic and photonic applications
🔷 Specifications
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Product: |
Single crystal GaAs wafer |
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Material property: |
Crystal structure: Rhombohedral |
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Lattice constant: a = 5.6534 Å, |
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Melting point: 1237 °C |
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Dielectric constant: 13.1 |
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Dislocation Density: <5×10³ cm⁻² |
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Electron mobility: 3500-3600 cm²/V·s |
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Growth Method: VGF |
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Conductive type/ Dopant |
• Semi-insulating / un-doped • Semi-insulating / Cr-doped • N-type / Si-doped • N-type / Fe-doped • P-type / Zn-doped |
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Carrier concentration |
• > 5 × 1017 • > 2 × 1018 |
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Dimension: |
• 5 × 5 × 0.5 mm • 5 × 10 × 0.5 mm • 10 × 10 × 0.5 mm • 20 × 20 × 0.5 mm • φ2″ × 0.35 mm • φ3″ × 0.5 mm • φ4″ × 0.6 mm • φ6″ × 0.65 mm • Other sizes customizable |
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Orientation: |
• <100> ± 0.5° • <100> with 2° off toward <111> |
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Polishing: |
• Fine ground • Single side epi-polished • double side epi-polished |
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Surface roughness: |
< 0.5 nm |
🔷 Applications
- RF and microwave devices (amplifiers, MMICs)
- Satellite communication and radar systems
- Optical communication systems
- Laser diodes and LEDs
- High-efficiency solar cells
- Wireless communication (5G, WLAN, GPS)
- Aerospace and defense electronics
🔷 Why Choose GaAs Over Silicon
- Direct bandgap enables efficient light emission (Si cannot)
- Much higher electron mobility for faster devices
- Better performance at high frequencies (RF/mmWave)
- Lower noise for communication systems
- Strong radiation resistance for space applications
🔷 Customization Options
We support customized GaAs wafers based on your requirements:
- Diameter and thickness
- Orientation and off-angle
- Conductive type and doping
- Surface polishing (SSP / DSP)
- Epitaxial-ready wafers
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