MgAl₂O₄ Wafer (Magnesium Aluminate Spinel Substrate)
High-performance insulating spinel substrate for microwave devices, GaN epitaxy, and advanced thin film applications
Description
🔷 Overview
MgAl₂O₄ (Magnesium Aluminate Spinel) wafer is a high-quality single crystal substrate with a cubic spinel structure, widely used for microwave devices, acoustic applications, and epitaxial growth of III-V nitride materials.
With excellent thermal stability, high hardness, and good lattice compatibility with GaN and other materials, MgAl₂O₄ is an ideal substrate for high-frequency electronics and advanced thin film deposition processes such as PLD, MBE, and sputtering.
🔷 Key Features
- Cubic spinel structure with high stability
- Excellent insulating properties
- Good lattice match for GaN and oxide materials
- High hardness (≈ 8 Mohs)
- Wide optical transmission (UV to IR)
- Suitable for microwave and acoustic devices
🔷 Specifications
| Product: | Single crystal magnesium aluminate (MgAl2O4) wafer |
| Material property: | Crystal structure: Cubic |
| Lattice constant: a = 8.083 Å | |
| Density: 3.64 g/cm3 | |
| Melting point: 2130 °C | |
| Growth Method: | CZ |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
- GaN and III-V nitride epitaxy
- Microwave and RF devices
- Bulk acoustic wave (BAW) devices
- Optical windows and IR applications
- Fast IC and thin film substrates
🔷 Why Choose MgAl₂O₄ Wafer
- Excellent thermal and chemical stability
- Suitable for high-frequency and high-power devices
- Strong mechanical durability
- Good compatibility with advanced epitaxial materials
🔷 Customization Options
- Orientation & off-cut
- Thickness & size
- Surface finish (SSP / DSP / optical grade)
- Research-grade / device-grade
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