Description
🔷 Overview
LSAT ((La,Sr)(Al,Ta)O₃) wafer is a cubic perovskite single crystal widely used as a substrate for epitaxial growth of oxide thin films.
It offers excellent lattice matching (~3.868 Å) with a wide range of perovskite materials and exhibits high thermal stability without phase transition over a broad temperature range.
This makes LSAT an ideal substrate for superconductors, ferroelectrics, and complex oxide heterostructures.
🔷 Key Features
• Cubic perovskite crystal structure
• Excellent lattice matching (a ≈ 3.868 Å)
• No phase transition over wide temperature range
• High chemical and thermal stability
• Low electrical conductivity (ideal for thin film devices)
• Epi-ready surface with ultra-low roughness (< 0.5 nm)
🔷 Specifications
| Material: | LSAT, short for (La,Sr)(Al,Ta)O3 |
| Material property: | Crystal structure: cubic |
| Lattice constant: a = 3.868 Å | |
| Density: 6.74 g/cm3 | |
| Melting point: 1840 °C | |
| Growth Method: | CZ |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
• High-temperature superconducting films (e.g. YBCO)
• Perovskite oxide thin film epitaxy (e.g. SrTiO₃, manganites)
• Ferroelectric and multiferroic devices
• Spintronic and quantum materials
• RF and microwave devices
🔷 Customization Options
• Orientation and off-cut customization
• Thickness and dimension customization
• Double-side polishing (DSP) available
• Epi-ready surface treatment
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