Product:

Single crystal LaAlO3 wafer

Purity:

> 99.99%

Material property:

Crystal structure:             hexagonal

Lattice constant:              a = 5.357 Å, c = 13.22 Å

Density:                             6.52 g/cm3

Melting point:                  2080 °C

Hardness:                          6-6.5 mohs

Coefficient of Thermal expansion: 9.4 x 10^-6 / ℃

Dielectric Constant:       21 

Loss tangent (10ghz):    ~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k

Growth method:             CZ

Dimension:

• 5 × 5 mm

• 5 × 10 mm

• 10 × 10 mm

• 20 × 20 mm

• φ1″ x 0.5mm

• φ2″ x 0.5mm

• Other sizes customizable

Thickness:

• 0.1 mm

• 0.5 mm

• 1.0 mm

• 2.0 mm

• Other sizes customizable

Orientation:

• <100> ± 0.5°

• <110> ± 0.5°

• <111> ± 0.5°

• other off-angle

Polishing:

• Fine ground

• Single side epi-polished

• double side epi-polished

Surface roughness:

< 0.5 nm