LaSrAlO₄ Wafer (Lanthanum Strontium Aluminate Wafer)

High-quality perovskite-related substrate for superconducting thin films and oxide epitaxy

 

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Description

🔷 Overview

LaSrAlO₄ (Lanthanum Strontium Aluminate) wafer is a tetragonal single crystal substrate widely used for epitaxial growth of high-temperature superconducting thin films such as YBCO.

It features excellent lattice compatibility and low thermal expansion, enabling high-quality thin film growth with reduced stress and improved crystallinity.

 

🔷 Key Features

• Tetragonal crystal structure with high structural stability

• Excellent lattice matching for YBCO and oxide thin films

• Low thermal expansion coefficient (reduced film stress)

• No phase transition from melting to room temperature

• Epi-ready surface with ultra-low roughness (< 0.5 nm)

 

🔷 Specifications

Product:

Single crystal LaSrAlO4 wafer

Purity:

> 99.99%

Material property:

Crystal structure:             Tetragonal

Lattice constant:              a = 3.756 Å, c = 12.63 Å

Density:                             5.92 g/cm3

Melting point:                  1650 °C

Hardness:                          6-6.5 mohs

Dielectric constants:        16.8   

Growth method:             CZ

Dimension:

• 5 × 5 mm

• 5 × 10 mm

• 10 × 10 mm

• 20 × 20 mm

• φ1″ x 0.5mm
• φ2″ x 0.5mm
• Other sizes customizable

Thickness:

• 0.1 mm

• 0.5 mm

• 1.0 mm

• 2.0 mm

• Other sizes customizable

Orientation:

• <100> ± 0.5°

• <001> ± 0.5°

• other off-angle

Polishing:

• Fine ground

• Single side epi-polished

• double side epi-polished

Surface roughness:

< 0.5 nm

 

 

🔷 Applications

• High-temperature superconducting films (e.g. YBCO)

• Oxide thin film epitaxy

• Ferroelectric and functional materials

• Strain engineering research

• Advanced quantum materials

 

🔷 Customization Options

• Orientation and off-cut customization

• Thickness and dimension customization

• Double-side polishing (DSP) available

• Epi-ready surface treatment