LaAlO₃ Wafer (Lanthanum Aluminate Substrate)
Single crystal LaAlO₃ substrate for epitaxial growth of oxide thin films and superconducting materials
Description
🔷 Overview
LaAlO₃ wafer is a single crystal lanthanum aluminate substrate with a perovskite crystal structure, widely used for epitaxial growth of complex oxide thin films, high-temperature superconductors, and functional materials.
Due to its excellent lattice matching with perovskite materials, LaAlO₃ is an ideal substrate for oxide electronics and advanced thin film research.
🔷 Specifications
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Product: |
Single crystal LaAlO3 wafer |
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Purity: |
> 99.99% |
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Material property: |
Crystal structure: hexagonal |
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Lattice constant: a = 5.357 Å, c = 13.22 Å |
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Density: 6.52 g/cm3 |
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Melting point: 2080 °C |
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Hardness: 6-6.5 mohs |
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Coefficient of Thermal expansion: 9.4 x 10-6 / ℃ |
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Dielectric Constant: 21 |
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Loss tangent (10ghz): ~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
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Growth method: CZ |
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Dimension: |
• 5 × 5 mm • 5 × 10 mm • 10 × 10 mm • 20 × 20 mm • φ1″ x 0.5mm • φ2″ x 0.5mm • Other sizes customizable |
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Thickness: |
• 0.1 mm • 0.5 mm • 1.0 mm • 2.0 mm • Other sizes customizable |
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Orientation: |
• <100> ± 0.5° • <110> ± 0.5° • <111> ± 0.5° • other off-angle |
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Polishing: |
• Fine ground • Single side epi-polished • double side epi-polished |
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Surface roughness: |
< 0.5 nm |
🔷 Applications
- High-temperature superconductors
- Oxide thin film epitaxy
- Ferroelectric & magnetic materials
- Perovskite oxide research
- Semiconductor & quantum materials
🔷 Customization
Custom specifications are available upon request:
- Size & thickness
- Orientation & off-cut
- Surface polishing
- Special shapes (round / square)
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