GdScO₃ Wafer (Gadolinium Scandate Wafer)
High-quality rare-earth scandate substrate for advanced oxide epitaxy and strain engineering
Description
🔷 Overview
GdScO₃ (Gadolinium Scandate) wafer is an orthorhombic perovskite single crystal widely used as a substrate for epitaxial growth of complex oxide thin films. It provides excellent lattice matching for perovskite materials and is particularly suitable for strain engineering and high-performance functional oxide devices.
🔷 Key Features
• Orthorhombic perovskite crystal structure
• Excellent lattice matching for oxide thin films
• High dielectric constant and thermal stability
• Suitable for strain engineering and epitaxial growth
• Epi-ready surface with ultra-low roughness (< 0.5 nm)
🔷 Specifications
| Product: | GdScO3 Wafer |
| Material property: | Crystal structure: Orthorhombic |
| Lattice constant: a = 5.45 Å, b = 5.75 Å, c = 7.93 Å, | |
| Melting point: 2120 °C | |
| Dimension: |
• 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <001> / <110> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
🔷 Applications
• Perovskite oxide thin film growth (e.g. BaTiO₃, SrTiO₃ systems)
• Strain engineering in functional oxides
• Ferroelectric and multiferroic devices
• High-k dielectric research
• Advanced semiconductor and quantum materials
🔷 Customization Options
• Orientation and off-cut customization
• Thickness and dimension customization
• Double-side polishing (DSP) available
• Epi-ready surface treatment
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