BGO Wafer

Epi-ready single crystal Bi4Ge3O12 (BGO) wafer

 
 
 
Material:Bi4Ge3O12 (BGO)
Purity:> 99.99%
Material property:Crystal structure: Cubic
Lattice constant: a = 10.518 Å
Density: 7.12 g/cm3
Melting point: 1050 °C
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• Other sizes customizable

Orientation:<100>
Polishing:Single side / double side epi-polished                                                              
Surface roughness:< 0.5 nm