GGG Wafer

Epi-ready single crystal Gd3Ga5O12 (GGG) wafer

 
 
 

Material:Gd3Ga5O12 (GGG)
Material property:Crystal structure: Cubic
Lattice constant: a =12.376Å
Density: 7.09 g/cm3
Melting point: 1800 °C
Growth Method:CZ
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• Other sizes customizable

Orientation:<100> / <110> / <111>
Polishing:Single side / double side epi-polished                                                              
Surface roughness:< 0.5 nm