Epi-ready single crystal KTaO3 Wafer
| Product: | KTaO3 Wafer |
| Material property: | Crystal structure: Cubic Perovskite |
| Lattice constant: a = 3.989 Å | |
| Density: 7.015 g/cm3 | |
| Hardness: 6 Mohs | |
| Thermal Conductivity: 0.17 W m-1 K-1 at 300 K | |
| Refractive Index: 2.14 | |
| Melting point: 1500 °C | |
| Growth Method: | Top seed flux growth |
| Dimension: | • 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • Other sizes customizable |
| Orientation: | <100> / <110> / <111> |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
