LSAT Wafer

Epi-ready single crystal (La,Sr)(Al,Ta)O3 wafer

 
 
 

Material:LSAT, short for (La,Sr)(Al,Ta)O3
Material property:Crystal structure: cubic
Lattice constant: a = 3.868 Å
Density: 6.74 g/cm3
Melting point: 1840 °C
Growth Method:CZ
Dimension:

• 5 × 5 × 0.5 mm

• 10 × 10 × 0.5 mm

• Other sizes customizable

Orientation:<100> / <110> / <111>
Polishing:Single side / double side epi-polished                                                              
Surface roughness:< 0.5 nm