Production/Research/Dummy grade wafers, epi-ready single crystal
| Product: | Silicon carbide (SiC) wafer | |||||
| Diamter: | 2'' / 3'' | |||||
| Polytype: | 4H / 6H | |||||
| Conductive type: | • n-type (N) • Semi-insulating (SI) | |||||
| Orientation: | • On-axis: <0001> • Off-axis: 1° / 3.5° / 4° / 8° towards <11-20> | |||||
| Grade: | Production Grade | Research Grade | Dummy Grade | |||
| Quality & price： | High | Medium | Low | |||
| Micro-pipe density: | < 10 cm-2 | < 30 cm-2 | < 100 cm-2 | |||
| Resistivity (Ω·cm): | 4H-N | 0.01 - 0.03 | 4H-N | 0.01 - 0.1 | 4H-N | 0.01 - 0.1 |
| 6H-N | 0.02 - 0.1 | 6H-N | 0.02 - 0.2 | 6H-N | 0.02 - 0.2 | |
| 6H-SI | > 105 (90%) | 6H-SI | > 105 (80%) | 6H-SI | > 105 (70%) | |
| Usable area: | > 90% | > 80% | > 70% | |||
| TTV / bow / Wrap: | < 25 um | |||||
| Polishing: | Single / double side epi-polished | |||||
| Surface roughness: | < 1 nm | |||||
| Useful Links: | • Properties and applications of SiC | |||||
