Highest industrial standard sapphire wafer, epi-ready polished surface
| Product: | Single crystal sapphire Al2O3 wafer |
| Purity: | >99.99% |
| Material property: | Crystal structure: hexagonal |
| Lattice constant: a = 4.76 Å, c = 12.99 Å | |
| Density: 3.97 g/cm3 | |
| Hardness: 9 mohs | |
| Thermal expansion coefficient: 7.5 × 10-6 /°C | |
| Thermal conductivity: 12.56 W/(m.K) @ 400 °C | |
| Dielectric constant: 11.58 | |
| Melting point: 2040 °C | |
| Dimension: | • 5 × 5 × 0.5 mm • 10 × 10 × 0.5 mm • 2'' × 0.43 mm • 4'' × 0.65 mm • others |
| Orientation: | • C-plane <0001> • A-plane <11-20> • R-plane <1-102> • M-plane <10-10> • Others |
| Polishing: | Single side / double side epi-polished |
| Surface roughness: | < 0.5 nm |
| Applications: | • Due to the small lattice mismatch, sapphire substrates is the popular epitaxial substrate for a wide range of materials, such as group III-V gallium nitride (GaN), zinc oxide (ZnO), superconductor, magnetic, etc • Sapphire is the epi-substrate for commercial light emitting diode (LED) industry • Sapphire is chemically and physically stable |
| Useful Links: | • Properties and applications of sapphire (Al2O3) |
